Contributing to high efficiency and miniaturization! High-frequency, high-current module equipped with SiCSBD.
Small temperature mobility switching characteristics, low forward voltage, high-speed switching time.
This is a high-frequency, high-current module equipped with SiC SBD (Silicon Carbide Schottky Barrier Diode). ◇ Average forward current 200A (DC/Tc = 100℃) ◇ Repetitive peak reverse voltage 1200V ◇ Junction temperature range Tvj -40℃ to 175℃ ◇ Switching time 100nsec ◇ Total charge Qc 180nC ◇ Forward voltage Vf 1.4V* Features Small temperature dependence in switching characteristics Low forward voltage, high-speed switching time Applications Contributes to miniaturization of high-output power supplies through high-frequency operation! Inverters, high-frequency pulse power supplies, industrial power supplies, medical power supplies, etc. *Please refer to the documentation for details.
- Company：ジェルグループ【株式会社ジェルシステム／株式会社ナカ アンド カンパニー】
- Price：Other
